All IGBT Datasheet

An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor device that combines the characteristics of a MOSFET and a bipolar transistor.

It is widely used in high-power applications such as motor drives, power supplies, and inverters.

The IGBT consists of a three-layer structure, including an N-type drift region sandwiched between a P-type collector and an N-type emitter.

It operates by controlling the current flow between the collector and emitter terminals using a voltage applied to the gate terminal.

The IGBT offers advantages such as low conduction losses and high voltage blocking capabilities, making it suitable for high-efficiency and high-power applications.